Newly released data 2011/11/21

Special issue of Japanese Journal of Applied Physics have been published, and the papers selected from e-Therm2010 presentation have been included. Newly released data were recorded as database for original data of the paper "Development of Network Database System for Thermophysical Property Data of Thin Films" published in supecial issue of JJAP. Summary of the data is as follows.

<Titanium nitride thin film>
This is the data on the TiN single layer film (thickness 681nm) formed by DC reactive magnetron sputtering method on a synthetic quartz substrate. We recorded thermal diffusivity of thin films measured using a nanosecond thermoreflectance method, temperature hysteresis loop derived from the measurement and also the data to calculate thermophysical properties such as thermal diffusion time obtained as a fitting result by analysis formula. As optical properties of TiN thin films, we released reflectivity, extinction coefficient, refractive index and absorption coefficient. Also, as material information, we released film-forming parameters and the measurement data of RBS (Rutherford back scattering) spectrum and XRD (X-Ray Diffraction) spectrum.
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<Alumina thin film>
We released the property data of amorphous alumina (thickness 0.5-100nm) formed by RF magnetron sputtering method on a quartz substrate. In the measurement of thermophysical properties using a picosecond thermoreflectance method, both sides of the transparent alumina thin film of the measurement samples are coated with reflective films (molybdenum thin film). Therefore, we classified and released these materials as multilayer (three-layer) thin films in our database. As property data, we released the interfacial thermal resistance between alumina thin film and molybdenum thin film and thermal diffusivity of aluminum thin films.
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<ITO thin film;
This is the property data on ITO thin films (thickness 200nm) formed by DC magnetron sputtering method on a quartz substrate. We released the information of the films that oxygen flow rate was changed during a film-forming process, thermal diffusivity measured using a thermoreflectance method (also released the data of thermal conductivity determined from specific heat capacity per volume) and electrical resistivity measured using a four terminal method.
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